On the Recovery of Simulated Plasma Process Induced Damage in High- κ Dielectrics

• Published in: 2006 IEEE International Conference on IC Design and Technology pp. 1 - 4
• Main Authors: Pantisano, L., O' Sullivan, B.J., Roussel, P.J., Degraeve, R., Groeseneken, G., DeGendt, S., Heyns, M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2006
• Subjects: Analytical models; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Plasma materials processing; Plasma simulation; Plasma temperature; Rapid thermal annealing; Rapid thermal processing; Thermal stresses
• ISBN: 142440097X; 9781424400973
• ISSN: 2381-3555; 2691-0462
• DOI: 10.1109/ICICDT.2006.220803

A detailed analysis of the ability of high-k materials to recover from plasma damage, as simulated by Fowler-Nordheim stress is presented. Forming gas and high temperature rapid thermal anneal (RTA) steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO 2 materials (EOT<2nm) are correlated with structural differences in these dielectrics, as well as the trap generation rate, centroids and defect de-passivation. We show that plasma damage can be successfully recovered for HfO 2 by high temperature annealing