Optimized Nickel Suilicide Technology for Fully Depleted Nano-Scale SIO MOSFETs

Optimized nickel silicide technology is proposed for high performance fully depleted nano-scale SOI CMOSFETs. Nickel silicide properties with different initial nickel thicknesses were investigated on thin film SOI MOSFETs. Silicon consumption rate and correlation between the deposited nickel and the...

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Bibliographic Details
Published in2005 IEEE Conference on Electron Devices and Solid-State Circuits pp. 765 - 768
Main Authors Yun, J.G., Oh, S.Y., Kim, Y.J., Lee, W.J., Wang, T., Tuya, A., Ji, H.H., Han, I.S., Wang, J.S., Lee, H.D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Conductivity
MOSFETs
Nickel
Semiconductor films
Shape
Silicidation
Silicides
Silicon
Solids
Temperature
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Summary:Optimized nickel silicide technology is proposed for high performance fully depleted nano-scale SOI CMOSFETs. Nickel silicide properties with different initial nickel thicknesses were investigated on thin film SOI MOSFETs. Silicon consumption rate and correlation between the deposited nickel and the formed nickel silicide thickness were calculated. It was shown that more thermally stable nickel silicide was formed with the controlled nickel thickness. Moreover, enhanced device performance of fully depleted SOI NMOSFET was demonstrated with the controlled nickel thickness
ISBN:0780393392
9780780393394
DOI:10.1109/EDSSC.2005.1635389