Charging phenomena of the medium dose implantation by a carbonization of the surface layer of the photo-resist

In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section...

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Bibliographic Details
Published inExtended Abstracts of the Fifth International Workshop on Junction Technology pp. 65 - 68
Main Authors Kamiyanagi, H., Shibata, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Absorption
Electrostatic measurements
Image analysis
Image converters
Ion implantation
Manufacturing industries
Resists
Scanning electron microscopy
Surface charging
Toy industry
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Summary:In this paper, the correlation between the charging phenomena and the photo-resists material after medium dose implantation is reported. To investigate the characteristic change of the photo-resist after ion implantation, the photo-resist removal performance is studied by FT-IR and SEM cross-section image analysis. The result shows that carbonization of photo-resist is promoted by the ion implantation. Both i-line photo-resist and KrF photo-resist were studied. The Si wafer was covered by the 400nm SiO/sub 2/ film. The surface potential measurement results of photoresist coating on SiO/sub 2/ film for various implantations were investigated. The results suggest that the destruction of the finer device due to charging at medium dose implantation will occur more frequently as the resolution of photo-resist is improved by lowering the bonding energy.
ISBN:4990215869
9784990215866
DOI:10.1109/IWJT.2005.203883