Structural characteristics of hydride vapor phase epitaxially grown GaN
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Published in | 2005 International Semiconductor Device Research Symposium pp. 282 - 283 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2005
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Subjects | |
Online Access | Get full text |
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ISBN: | 142440083X 9781424400836 |
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DOI: | 10.1109/ISDRS.2005.1596095 |