AlGaN/GaN HEMTs: Experiment and Simulation of DC Characteristics

This paper presents simulated DC characteristics of an AlGaN/GaN HEMT along with corroborating experimental measurements for validation. GaN-based HFETs are vigorously pursued for possible applications in high power presented in I. Daumiller et al. (1998), high temperature presented in Y.-F. Wu et a...

Full description

Saved in:
Bibliographic Details
Published in2005 International Semiconductor Device Research Symposium pp. 252 - 253
Main Authors Faraclas, E.W., Webster, R.T., Anwar, A.F.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Aluminum gallium nitride
Circuit simulation
Computational modeling
Force measurement
Frequency
Gallium nitride
HEMTs
MODFETs
Numerical simulation
Silicon carbide
Online AccessGet full text

Cover

More Information
Summary:This paper presents simulated DC characteristics of an AlGaN/GaN HEMT along with corroborating experimental measurements for validation. GaN-based HFETs are vigorously pursued for possible applications in high power presented in I. Daumiller et al. (1998), high temperature presented in Y.-F. Wu et al. (2004), and high frequency devices and circuits. Theoretical experimentation is required for device optimization to realize higher power and operation at frequencies through W-band
ISBN:142440083X
9781424400836
DOI:10.1109/ISDRS.2005.1596079