Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices
Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs ma...
Saved in:
Published in | Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004 Vol. 3; pp. 157 - 160 vol. 3 |
---|---|
Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots. |
---|---|
AbstractList | Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots. |
Author | Shamirzaev, T.S. Zhuravlev, K.S. Tenne, D.A. Gilinsky, A.M. Toropov, A.I. von Borczyskowski, C. Bakarov, A.K. Zahn, D.R.T. Schulze, S. |
Author_xml | – sequence: 1 givenname: T.S. surname: Shamirzaev fullname: Shamirzaev, T.S. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 2 givenname: A.M. surname: Gilinsky fullname: Gilinsky, A.M. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 3 givenname: A.I. surname: Toropov fullname: Toropov, A.I. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 4 givenname: A.K. surname: Bakarov fullname: Bakarov, A.K. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 5 givenname: D.A. surname: Tenne fullname: Tenne, D.A. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 6 givenname: K.S. surname: Zhuravlev fullname: Zhuravlev, K.S. organization: Inst. of Semicond. Phys., Novosibirsk, Russia – sequence: 7 givenname: S. surname: Schulze fullname: Schulze, S. – sequence: 8 givenname: C. surname: von Borczyskowski fullname: von Borczyskowski, C. – sequence: 9 givenname: D.R.T. surname: Zahn fullname: Zahn, D.R.T. |
BookMark | eNp9TksKwjAUDKjg9wK6eRewvtqW1qWIP0QEP0uR2Dw10iS1SRfe3gqunRkYmGFg2qyujSbG-j56vo-T0Wa3Px28MWLo-VEUxZjUWBvjBIOkYthkPWufWCGMQoyDFjtvjaAMzA3yh3EmK5XUZFPSKX3DtZ5aeJVcu1KBMM4CqSsJQQKkriRkQamDK9cC7jyHabbk1UJxV8iUbJc1bjyz1Pt5hw0W8-NsNZREdMkLqXjxvvyeBv_bDz2nRR4 |
ContentType | Conference Proceeding |
DBID | 6IE 6IL CBEJK RIE RIL |
DOI | 10.1109/KORUS.2004.1555708 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Electronic Library (IEL) IEEE Proceedings Order Plans (POP All) 1998-Present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
EndPage | 160 vol. 3 |
ExternalDocumentID | 1555708 |
Genre | orig-research |
GroupedDBID | 6IE 6IK 6IL AAJGR AAVQY ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK OCL RIE RIL |
ID | FETCH-ieee_primary_15557083 |
IEDL.DBID | RIE |
ISBN | 0780383834 9780780383838 |
IngestDate | Wed Jun 26 19:21:04 EDT 2024 |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-ieee_primary_15557083 |
ParticipantIDs | ieee_primary_1555708 |
PublicationCentury | 2000 |
PublicationDate | 20040000 |
PublicationDateYYYYMMDD | 2004-01-01 |
PublicationDate_xml | – year: 2004 text: 20040000 |
PublicationDecade | 2000 |
PublicationTitle | Proceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004 |
PublicationTitleAbbrev | KORUS |
PublicationYear | 2004 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0000454073 |
Score | 2.690325 |
Snippet | Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 157 |
SubjectTerms | Charge carrier processes Gallium arsenide Kinetic theory Optical device fabrication Photoluminescence Photonic band gap Quantum dots Radiative recombination Temperature US Department of Transportation |
Title | Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices |
URI | https://ieeexplore.ieee.org/document/1555708 |
Volume | 3 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwED6VTkyAWgQUkAdGkqZ5NM5YIUoB8RBQqQuqHOcKiOYBSRZ-PWenCQJ1IJPjONYplu7Ld_7uDHAyRNvypYsGsTZuuIETGBwD-pFDQZcjbDfSKt_b4WTqXs28WQtOm1wYRNTiMzRVU-_lR6ksVaisT9jn-Sqzd4NbdpWr1cRTqlJyjmbm3CLexR13VWCnvud10owV9K_vHqaPmh6aq1l_Ha-i0WW8BTe1XZWo5N0si9CUX39KNv7X8G3o_uTxsfsGoXaghUkHntXxZ0uWLlj2mhbKOSnlu9SDqfMyGeXso6QPXsaMKGvOMA6R3FPE3hKmdriVj2ShSCL2IjI2Wl4IeiPWpf4x70JvfP50NjGUefOsqmUxX1nm7EI7SRPcA-Z5i0Ag8Rok-KZHwcD2Ja2ZLwTBnBzsQ2fdDAfru3uwWWldVNDiENrFZ4lHBONFeKzX7xsi550j |
link.rule.ids | 310,311,786,790,795,796,802,4069,4070,27958,55109 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1NT4NAEJ009aAnNa1R68cePAqlBQp7bIyV2g-NtkkvpllgWo0FqsDFX-_s0tZoepDTsiybCZvM482-mQW4amHTcAILNWJtrmZxk2sucvqRQ0GXKZpWqFS-w5Y3tu4n9qQE15tcGERU4jPUZVPt5YdJkMtQWZ2wz3ZkZu8O4bzBi2ytTUSlKCZnKm7uGsS8XNNaldhZ37vrtBmD13sPT-NnRRD11by_DlhR-NLZh8HaskJW8q7nma8HX3-KNv7X9AOo_mTysccNRh1CCeMKvMgD0BYsmbHla5JJ9yS174EaTJ3duJ2yj5w-eR4xIq0pw8hHclAhe4uZ3OOWXpL5Ig7ZXCxZe3En6I1IFfvHtAq1zu3oxtOkedNlUc1iurLMPIJynMR4DMy2Z1wgMRskAKdHvNF0Alo1RwgCuqBxApVtM5xu776EXW806E_73WGvBnuF8kWGMM6gnH3meE6gnvkXai2_AaD-oHk |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=Proceedings.+The+8th+Russian-Korean+International+Symposium+on+Science+and+Technology%2C+2004.+KORUS+2004&rft.atitle=Model+of+photoluminescence+of+InAs+quantum+dots+embedded+in+indirect+band+gap+AlGaAs+matrices&rft.au=Shamirzaev%2C+T.S.&rft.au=Gilinsky%2C+A.M.&rft.au=Toropov%2C+A.I.&rft.au=Bakarov%2C+A.K.&rft.date=2004-01-01&rft.pub=IEEE&rft.isbn=9780780383838&rft.volume=3&rft.spage=157&rft.epage=160+vol.+3&rft_id=info:doi/10.1109%2FKORUS.2004.1555708&rft.externalDocID=1555708 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780383838/lc.gif&client=summon&freeimage=true |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780383838/mc.gif&client=summon&freeimage=true |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=9780780383838/sc.gif&client=summon&freeimage=true |