Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices

Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs ma...

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Published inProceedings. The 8th Russian-Korean International Symposium on Science and Technology, 2004. KORUS 2004 Vol. 3; pp. 157 - 160 vol. 3
Main Authors Shamirzaev, T.S., Gilinsky, A.M., Toropov, A.I., Bakarov, A.K., Tenne, D.A., Zhuravlev, K.S., Schulze, S., von Borczyskowski, C., Zahn, D.R.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Charge carrier processes
Gallium arsenide
Kinetic theory
Optical device fabrication
Photoluminescence
Photonic band gap
Quantum dots
Radiative recombination
Temperature
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Summary:Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots.
ISBN:0780383834
9780780383838
DOI:10.1109/KORUS.2004.1555708