Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 /spl mu/m

Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe the formation of neutral and charged exciton complexes and a large s-p shell splitting.

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Bibliographic Details
Published in2005 Quantum Electronics and Laser Science Conference Vol. 2; pp. 1067 - 1069 Vol. 2
Main Authors Cade, N.I., Gotoh, H., Kamada, H., Tawara, T., Sogawa, T., Nakano, H., Okamoto, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Excitons
Gallium arsenide
Indium gallium arsenide
Laboratories
Luminescence
Photoluminescence
Quantum dots
Spectroscopy
Stimulated emission
Structural shells
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Summary:Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe the formation of neutral and charged exciton complexes and a large s-p shell splitting.
ISBN:1557527962
9781557527967
DOI:10.1109/QELS.2005.1549032