Carrier transport in Si/SiO/sub x//Si structures by direct wafer bonding
The results of carrier transport analysis in silicon tunnel n/sup ++//spl bsol/p/sup ++/ structures made by direct wafer bonding are presented. The idea was to create tunnel transparent SiO/sub x/ layer in which electronic states could be localized at the bonding interface and double barrier tunnel...
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Published in | Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005 pp. 37 - 38 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2005
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Subjects | |
Online Access | Get full text |
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Summary: | The results of carrier transport analysis in silicon tunnel n/sup ++//spl bsol/p/sup ++/ structures made by direct wafer bonding are presented. The idea was to create tunnel transparent SiO/sub x/ layer in which electronic states could be localized at the bonding interface and double barrier tunnel diode structure could be created. A hysteresis was found on voltage-current characteristics after applying of inverse bias exceeding some threshold value. The hysteresis can be related to charging/discharging of electron states localized in the dielectric layer. Applicability of direct wafer bonding for creation of double-barrier quantum structures with resonance tunneling through interface oxide layer is discussed in the paper. |
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ISBN: | 9785778204911 5778204914 |
ISSN: | 1815-3712 |
DOI: | 10.1109/SIBEDM.2005.195576 |