Carrier transport in Si/SiO/sub x//Si structures by direct wafer bonding

The results of carrier transport analysis in silicon tunnel n/sup ++//spl bsol/p/sup ++/ structures made by direct wafer bonding are presented. The idea was to create tunnel transparent SiO/sub x/ layer in which electronic states could be localized at the bonding interface and double barrier tunnel...

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Bibliographic Details
Published inProceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005 pp. 37 - 38
Main Authors Kurkin, S.G., Plotnikov, Y.V., Efremov, M.D., Kamaev, G.N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Dielectrics
Electrons
Hysteresis
Photonic band gap
Resonance
Semiconductor diodes
Silicon
Tunneling
Voltage
Wafer bonding
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Summary:The results of carrier transport analysis in silicon tunnel n/sup ++//spl bsol/p/sup ++/ structures made by direct wafer bonding are presented. The idea was to create tunnel transparent SiO/sub x/ layer in which electronic states could be localized at the bonding interface and double barrier tunnel diode structure could be created. A hysteresis was found on voltage-current characteristics after applying of inverse bias exceeding some threshold value. The hysteresis can be related to charging/discharging of electron states localized in the dielectric layer. Applicability of direct wafer bonding for creation of double-barrier quantum structures with resonance tunneling through interface oxide layer is discussed in the paper.
ISBN:9785778204911
5778204914
ISSN:1815-3712
DOI:10.1109/SIBEDM.2005.195576