A 72 Gb/s 2/sup 31/-1 PRBS generator in SiGe BiCMOS technology
A 2/sup 31/-1 72 Gb/s PRBS generator is reported in a 0.13 /spl mu/m SiGe BiCMOS technology with 150 GHz-f/sub T/ HBTs. Variable delays are introduced along the 36 GHz clock path to increase timing margins. A true BiCMOS logic family using NMOS FETs in the clock path is employed throughout the circu...
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Published in | ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005 pp. 342 - 602 Vol. 1 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2005
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Subjects | |
Online Access | Get full text |
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Summary: | A 2/sup 31/-1 72 Gb/s PRBS generator is reported in a 0.13 /spl mu/m SiGe BiCMOS technology with 150 GHz-f/sub T/ HBTs. Variable delays are introduced along the 36 GHz clock path to increase timing margins. A true BiCMOS logic family using NMOS FETs in the clock path is employed throughout the circuit, which dissipates 9.28 W from a 3.3 V supply to provide a single-ended output swing of 300 mV at 72 Gb/s. |
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ISBN: | 0780389042 9780780389045 |
ISSN: | 0193-6530 2376-8606 |
DOI: | 10.1109/ISSCC.2005.1494009 |