A 72 Gb/s 2/sup 31/-1 PRBS generator in SiGe BiCMOS technology

A 2/sup 31/-1 72 Gb/s PRBS generator is reported in a 0.13 /spl mu/m SiGe BiCMOS technology with 150 GHz-f/sub T/ HBTs. Variable delays are introduced along the 36 GHz clock path to increase timing margins. A true BiCMOS logic family using NMOS FETs in the clock path is employed throughout the circu...

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Published inISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005 pp. 342 - 602 Vol. 1
Main Authors Dickson, T., Laskin, E., Khalid, L., Beerkens, R., Jingqiong Xie, Karajica, B., Voinigescu, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
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Summary:A 2/sup 31/-1 72 Gb/s PRBS generator is reported in a 0.13 /spl mu/m SiGe BiCMOS technology with 150 GHz-f/sub T/ HBTs. Variable delays are introduced along the 36 GHz clock path to increase timing margins. A true BiCMOS logic family using NMOS FETs in the clock path is employed throughout the circuit, which dissipates 9.28 W from a 3.3 V supply to provide a single-ended output swing of 300 mV at 72 Gb/s.
ISBN:0780389042
9780780389045
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2005.1494009