A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology

• Published in: 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers pp. 39 - 42
• Main Authors: Shiramizu, N., Masuda, T., Tanabe, M., Washio, K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2005
• Subjects: Bandwidth; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband communication; Ultra wideband technology
• ISBN: 9780780389830; 0780389832
• ISSN: 1529-2517; 2375-0995
• DOI: 10.1109/RFIC.2005.1489204

We have developed a SiGe HBT low-noise amplifier (LNA) for ultra-wideband (UWB) systems. We reduced the noise figure (NF) over the frequency range from 3.1 to 10.6 GHz (the FCC-specified UWB range) by using a novel LNA structure with an inductor-terminated, common-base input stage in front of a resistive-feedback amplifier. The circuit topology simultaneously enables increased gain for the input stage and wideband noise matching. On-chip measurement using microwave probes has shown that the LNA - fabricated using commercially available 0.25- /spl mu/m SOI SiGe BiCMOS technology - provides a wide 3-dB bandwidth of 14.5 GHz, an S21 of 22 dB, and a low noise figure ranging from 2.7 dB to 3.9 dB, along with low power consumption of 13.2 mW. Deviation of the S21 group delay is kept within 25 ps to ensure faithful signal amplification. The LNA occupies a chip area of 0.49 mm/sup 2/.