Microwave AlxGa1-xAs hetero-MIS gate depletion-mode InP field effect transistors

• Published in: 1986 International Electron Devices Meeting pp. 771 - 774
• Main Authors: Itoh, T., Kasahara, K., Ozawa, T., Ohata, K.
• Format: Conference Proceeding
• Language: English
• Published: IRE 1986
• Subjects: Current-voltage characteristics; Etching; Fabrication; Gallium arsenide; Gold; Indium phosphide; Microwave FETs; Molecular beam epitaxial growth; Thermal conductivity; Voltage

Depletion-mode InP FET's were successfully fabricated by employing MBE-grown undoped Al x Ga 1-x AS (x=0.0 and 0.3) layers as a gate insulator. The fabricated 1 µm gate InP FET's with an ion-implanted n-channel exhibited good and stable depletion-mode characteristics and microwave performa...