Microwave AlxGa1-xAs hetero-MIS gate depletion-mode InP field effect transistors

Depletion-mode InP FET's were successfully fabricated by employing MBE-grown undoped Al x Ga 1-x AS (x=0.0 and 0.3) layers as a gate insulator. The fabricated 1 µm gate InP FET's with an ion-implanted n-channel exhibited good and stable depletion-mode characteristics and microwave performa...

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Bibliographic Details
Published in1986 International Electron Devices Meeting pp. 771 - 774
Main Authors Itoh, T., Kasahara, K., Ozawa, T., Ohata, K.
Format Conference Proceeding
LanguageEnglish
Published IRE 1986
Subjects
Current-voltage characteristics
Etching
Fabrication
Gallium arsenide
Gold
Indium phosphide
Microwave FETs
Molecular beam epitaxial growth
Thermal conductivity
Voltage
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Summary:Depletion-mode InP FET's were successfully fabricated by employing MBE-grown undoped Al x Ga 1-x AS (x=0.0 and 0.3) layers as a gate insulator. The fabricated 1 µm gate InP FET's with an ion-implanted n-channel exhibited good and stable depletion-mode characteristics and microwave performance. 8.3 dB maximum power gain was obtained for a GaAs gate InP FET at 12 GHz, and more than 7 dB power gain was obtained for both GaAs and Al 0.3 Ga 0.7 As gate InP FET's.
DOI:10.1109/IEDM.1986.191308