A high speed, low voltage silicon photodiode with buried isolation region

A new epitaxial silicon p π n photodiode that operates at biases as low as 4 V has been developed. The device has a heavily doped p ++ isolation region between the p + substrate and the π epitaxial layer. Fast response and low leakage current result from the recombination and trapping of the minorit...

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Bibliographic Details
Published in1984 International Electron Devices Meeting pp. 733 - 736
Main Authors Chang, G.K., Hartman, A.R., Robinson, M., Riley, T.J., Lee, K.Y.
Format Conference Proceeding
LanguageEnglish
Published IRE 1984
Subjects
Dark current
Electron traps
Epitaxial layers
Leakage current
Low voltage
Photodiodes
Silicon
Spontaneous emission
Substrates
Temperature
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Summary:A new epitaxial silicon p π n photodiode that operates at biases as low as 4 V has been developed. The device has a heavily doped p ++ isolation region between the p + substrate and the π epitaxial layer. Fast response and low leakage current result from the recombination and trapping of the minority carrier electrons in the substrate. Experimental results on such a n+π p ++ p + device with 1.1 mm 2 photosensitive area show rise and fall characteristics of 3 to 4 ns at 4 V bias with 825 nm radiation. The dark current is typically 40 pA at room temperature.
DOI:10.1109/IEDM.1984.190829