A high speed, low voltage silicon photodiode with buried isolation region
A new epitaxial silicon p π n photodiode that operates at biases as low as 4 V has been developed. The device has a heavily doped p ++ isolation region between the p + substrate and the π epitaxial layer. Fast response and low leakage current result from the recombination and trapping of the minorit...
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Published in | 1984 International Electron Devices Meeting pp. 733 - 736 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IRE
1984
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Subjects | |
Online Access | Get full text |
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Summary: | A new epitaxial silicon p π n photodiode that operates at biases as low as 4 V has been developed. The device has a heavily doped p ++ isolation region between the p + substrate and the π epitaxial layer. Fast response and low leakage current result from the recombination and trapping of the minority carrier electrons in the substrate. Experimental results on such a n+π p ++ p + device with 1.1 mm 2 photosensitive area show rise and fall characteristics of 3 to 4 ns at 4 V bias with 825 nm radiation. The dark current is typically 40 pA at room temperature. |
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DOI: | 10.1109/IEDM.1984.190829 |