Proton-implanted stripe-geometry (Al, Ga)As lasers using SiO2masking

• Published in: IEEE transactions on electron devices Vol. 31; no. 12; pp. 1910 - 1912
• Main Authors: Koszi, L.A., Donnelly, V.M., Dautremont-Smith, W.C., Barnes, P.A.
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.1984
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1984.21812

Proton-bombarded gain-guided stripe-geometry (Al, Ga)As lasers have been made using an SiO 2 proton-implant mask. The Plasma-deposited SiO 2 was anisotropically plasma etched to yield vertical-walled stripes which acted as the high-resolution implant mask, Stripe width is determined solely by photolithography, and consequently strict tolerances can be maintained for optimum laser performance yields. A typical SiO 2 proton mask was 2.5 µm thick and 4.5 µm wide. The electrical and optical characteristics and accelerated aging behavior of these lasers are identical to those of lasers originating from neighboring wafer sites which were wire masked. The use of an anisotropically etched dielectric mask has many advantages over wire or plated metal implant masks, making it ideally suited for use on large wafers.