A regional analytic model for current interruption in high voltage center gated bipolar switches

High voltage (500V) crosspoint arrays have been realized in dielectric isolation technology for telecommunications applications. The crosspoint elements can be lateral bipolar devices with center gates such as the gated diode switch. To explain the transient behavior of these devices during current...

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Bibliographic Details
Published in1982 International Electron Devices Meeting pp. 484 - 487
Main Authors Kohl, J.E., Gammel, J.C., Hartman, A.R., Hirsch, M.D., Riley, T.J., Scott, R.S.
Format Conference Proceeding
LanguageEnglish
Published IRE 1982
Subjects
Anodes
Cathodes
Circuit testing
Dielectric substrates
Diodes
Electrons
Plasma devices
Switches
Telecommunication switching
Voltage
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Summary:High voltage (500V) crosspoint arrays have been realized in dielectric isolation technology for telecommunications applications. The crosspoint elements can be lateral bipolar devices with center gates such as the gated diode switch. To explain the transient behavior of these devices during current interruption a semi-analytical model has been developed. In spite of the approximate nature of the model, its results agree favorably with the observed properties of the crosspoint, and perhaps more significantly it provides a more quantitative test of the basic understanding of the device operation.
DOI:10.1109/IEDM.1982.190331