GaAs1-xSbx1.06 µm avalanche photodiodes
Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs 1-x Sb x material grown by LPE on GaAs substrates. M...
Saved in:
Published in | 1976 International Electron Devices Meeting pp. 424 - 425 |
---|---|
Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IRE
1976
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs 1-x Sb x material grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity. |
---|---|
DOI: | 10.1109/IEDM.1976.189073 |