GaAs1-xSbx1.06 µm avalanche photodiodes

Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs 1-x Sb x material grown by LPE on GaAs substrates. M...

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Bibliographic Details
Published in1976 International Electron Devices Meeting pp. 424 - 425
Main Authors Scholl, F.W., Nakano, K., Eden, R.C.
Format Conference Proceeding
LanguageEnglish
Published IRE 1976
Subjects
Avalanche photodiodes
Dark current
Electric breakdown
Fluctuations
Gallium arsenide
Leakage current
Optical materials
Optical receivers
P-n junctions
Photonic band gap
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Summary:Progress toward achieving high gain, avalanche photodiodes operating at 1.06µm is described. 1.06µm photodiodes have been fabricated (3 mil × 3 mil) with average gain of >14 at a leakage current of 150 na. These devices are fabricated from GaAs 1-x Sb x material grown by LPE on GaAs substrates. Multiple layer step graded structures are used to reduce stress in the active layers. A self-terminated depletion region design has been found to give significant improvement in gain uniformity.
DOI:10.1109/IEDM.1976.189073