A new Schottky-barrier GaAs epitaxial diode for infrared detection

• Published in: 1971 International Electron Devices Meeting pp. 64 - 66
• Main Authors: Yeh, C., Shabde, S.N.
• Format: Conference Proceeding
• Language: English
• Published: IRE 1971
• Subjects: Delay; Gallium arsenide; Infrared detectors; P-n junctions; Photodiodes; Photonic band gap; Radiation detectors; Schottky diodes; Signal to noise ratio; Time measurement

While experimenting with Schottky-barrier diodes in this laboratory, an unusual I-V characteristic of a GaAs nn + epitaxial diode with Ni-Au contact was observed. The reverse characteristic is normal with a sharp breakdown voltage around 50 V. The forward clark characteristic shows no current until...