A new Schottky-barrier GaAs epitaxial diode for infrared detection

While experimenting with Schottky-barrier diodes in this laboratory, an unusual I-V characteristic of a GaAs nn + epitaxial diode with Ni-Au contact was observed. The reverse characteristic is normal with a sharp breakdown voltage around 50 V. The forward clark characteristic shows no current until...

Full description

Saved in:
Bibliographic Details
Published in1971 International Electron Devices Meeting pp. 64 - 66
Main Authors Yeh, C., Shabde, S.N.
Format Conference Proceeding
LanguageEnglish
Published IRE 1971
Subjects
Delay
Gallium arsenide
Infrared detectors
P-n junctions
Photodiodes
Photonic band gap
Radiation detectors
Schottky diodes
Signal to noise ratio
Time measurement
Online AccessGet full text

Cover

More Information
Summary:While experimenting with Schottky-barrier diodes in this laboratory, an unusual I-V characteristic of a GaAs nn + epitaxial diode with Ni-Au contact was observed. The reverse characteristic is normal with a sharp breakdown voltage around 50 V. The forward clark characteristic shows no current until it breaks down at about 60 V. Under illumination, a large current flows at a forward voltage less than 1 V. The forward characteristic looks like that of an emission-saturated thermionic diode except that the saturation current increases drastically with illumination. This phenomenon is reproducible on all diodes fabricated on a certain wafer.
DOI:10.1109/IEDM.1971.188388