High performance ECL gates made by CDI and conventional methods

High performance integrated ECL gates with stage delays in the nanosecond and subnanosecond regions have been fabricated with conventional and collector diffused isolation (CDI) methods (1). These two fabrication techniques are compared on the basis of resulting circuit performance, circuit density,...

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Bibliographic Details
Published in1969 International Electron Devices Meeting p. 36
Main Authors Eckl, D.J., Konkle, K.H., Richardson, F.K., Idzik, S.A., Luce, R.L.
Format Conference Proceeding
LanguageEnglish
Published IRE 1969
Subjects
Circuit optimization
Delay
Fabrication
Integrated circuit yield
Laboratories
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Summary:High performance integrated ECL gates with stage delays in the nanosecond and subnanosecond regions have been fabricated with conventional and collector diffused isolation (CDI) methods (1). These two fabrication techniques are compared on the basis of resulting circuit performance, circuit density, and laboratory yields.
DOI:10.1109/IEDM.1969.188099