New two single-port GaAs memory cell

This paper presents a new GaAs memory cell with separate read and write single-ports which mixes the principal advantages of the current-mirror and conventional cells implementation. From simulation results, an address access time of Ins with 20 µA/cell power consumption has been achieved. The cell...

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Bibliographic Details
Published inProceedings of the 23rd European Solid-State Circuits Conference pp. 180 - 183
Main Authors Bernal, A., Guyot, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
Cache memory
Circuit testing
Gallium arsenide
Leakage current
Logic
MESFETs
Random access memory
Read-write memory
Schottky diodes
Voltage
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Summary:This paper presents a new GaAs memory cell with separate read and write single-ports which mixes the principal advantages of the current-mirror and conventional cells implementation. From simulation results, an address access time of Ins with 20 µA/cell power consumption has been achieved. The cell can be operated with single supply voltage of 1V up to 2V.