Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm

CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features are incorporated into...

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Bibliographic Details
Published inProceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005 pp. 11 - 16
Main Authors Cresswell, M.W., Park, B., Allen, R.A., Guthrie, W.F., Dixson, R.G., Tan, W.M., Murabito, C.E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Atomic force microscopy
Calibration
Data mining
Laboratories
Metrology
NIST
Scanning electron microscopy
Silicon
Testing
Uncertainty
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Summary:CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features are incorporated into a new test structure that has been designed to facilitate this type of CD-metrology study. The purpose of the work was to characterize the calibration statistics of SEM transfer-metrology when HRTEM is used as primary metrology in CD reference material calibration.
ISBN:0780388550
9780780388550
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2005.1452204