Growth-rate induced defects in GaSb

• Published in: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004 pp. 259 - 262
• Main Authors: Kindl, D., Hubik, P., Kristofik, J., Mares, J.J., Hulicius, E., Pangrac, J., Melichar, K., Jurka, V., Vyborny, Z., Touskova, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2004
• Subjects: Epitaxial growth; Epitaxial layers; Mathematics; Molecular beam epitaxial growth; P-n junctions; Phase measurement; Physics; Spectroscopy; Substrates; Transient analysis