Measurement of source coupled logic "exclusive OR" circuit ring oscillator of SOI Si vertical dual carrier field effect transistor with effective channel length of 5-30nm

Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Pres...

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Published inProceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004 Vol. 1; pp. 77 - 80 vol.1
Main Authors Tang, Z.M., Li, G.H., Yang, R., Xu, Y.Z., Yang, Y.H., Huang, D.H., Xu, P., Shen, S.G., Lin, C.L., Yan, F.Z., Han, D.J., Tien, X.N., Ji, Y.Z., Du, D.S., Huang, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
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Summary:Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length of 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Presented in this paper are the measured circuit performance of source coupled logic (SCL) CPU switching circuits of SOI Si VDCFET with effective channel length of 5-30 nm, including ring oscillators and "exclusive OR" circuits.
ISBN:9780780385115
078038511X
DOI:10.1109/ICSICT.2004.1434958