Triple high /spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications

In this article, we report on electrical and memory properties of triple high-/spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications. For 3 nm-thick Al/sub 2/O/sub 3//10 nm-thick...

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Bibliographic Details
Published in4th IEEE Conference on Nanotechnology, 2004 pp. 53 - 55
Main Authors Sanghun Jeon, Choi, S., Park, H., Hyunsang Hwang, Jung Hee Han, Hisun Chae, Soo Doo Chae, Ju Hyung Kim, Moon Kyung Kim, Youn Seok Jeong, Yoondong Park, Sunare Seo, Jo Won Lee, Chung Woo Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Annealing
Artificial intelligence
Flash memory
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Hydrogen
Materials science and technology
SONOS devices
Voltage
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Summary:In this article, we report on electrical and memory properties of triple high-/spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications. For 3 nm-thick Al/sub 2/O/sub 3//10 nm-thick HfO/sub 2//10 nm-thick Al/sub 2/O/sub 3/ (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of /spl plusmn/6 V/1-2 msec was obtained. In addition, high pressure D/sub 2/ annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.
ISBN:9780780385368
0780385365
DOI:10.1109/NANO.2004.1392247