Triple high /spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications
In this article, we report on electrical and memory properties of triple high-/spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications. For 3 nm-thick Al/sub 2/O/sub 3//10 nm-thick...
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Published in | 4th IEEE Conference on Nanotechnology, 2004 pp. 53 - 55 |
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Main Authors | , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
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Subjects | |
Online Access | Get full text |
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Summary: | In this article, we report on electrical and memory properties of triple high-/spl kappa/ stacks (Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/) with high pressure (10 atm) H/sub 2/ and D/sub 2/ annealing for SONOS type flash memory device applications. For 3 nm-thick Al/sub 2/O/sub 3//10 nm-thick HfO/sub 2//10 nm-thick Al/sub 2/O/sub 3/ (AHA) stack, memory window (M.W.) of 1.4 V at programming/erasing (P/E) condition of /spl plusmn/6 V/1-2 msec was obtained. In addition, high pressure D/sub 2/ annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time. |
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ISBN: | 9780780385368 0780385365 |
DOI: | 10.1109/NANO.2004.1392247 |