A high gain L-band GaAs FET technology for 28 V operation

This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits p...

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Bibliographic Details
Published in2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Vol. 2; pp. 821 - 824 Vol.2
Main Authors Inoue, K., Nagahara, M., Ui, N., Haematsu, H., Sano, S., Fukaya, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Breakdown voltage
Gallium arsenide
High power amplifiers
L-band
Linearity
Microwave FETs
Neodymium
Operational amplifiers
Power generation
Radio frequency
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Summary:This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called "plateau" profile is extinct. In addition, the estimated MTTF at Tch of 145/spl deg/C is longer than 4/spl times/10/sup 6/ hours.
ISBN:0780383311
9780780383319
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1339091