A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure
A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.
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Published in | 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) pp. 50 - 512 Vol.1 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2004
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Subjects | |
Online Access | Get full text |
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Summary: | A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure. |
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ISBN: | 9780780382671 0780382676 |
ISSN: | 0193-6530 2376-8606 |
DOI: | 10.1109/ISSCC.2004.1332588 |