A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure

A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.

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Bibliographic Details
Published in2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) pp. 50 - 512 Vol.1
Main Authors Yamaoka, K., Iwanari, S., Murakuki, Y., Hirano, H., Sakagami, M., Nakakuma, T., Miki, T., Gohou, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Capacitance
Capacitors
Ferroelectric films
Ferroelectric materials
Hysteresis
Low voltage
Nonvolatile memory
Operating systems
Power system reliability
Random access memory
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Summary:A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.
ISBN:9780780382671
0780382676
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2004.1332588