Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology

We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (f/sub /spl tau//) and maximum oscillation frequency (f/sub max/) over 300 GHz and open-base breakdown voltage (BV/sub ceo/) over 4 V. Logic circuits...

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Bibliographic Details
Published inIEEE electron device letters Vol. 25; no. 8; pp. 520 - 522
Main Authors Gang He, Howard, J., Le, M., Partyka, P., Bin Li, Kim, G., Hess, R., Bryie, R., Lee, R., Rustomji, S., Pepper, J., Kail, M., Helix, M., Elder, R.B., Jansen, D.S., Harff, N.E., Prairie, J.F., Daniel, E.S., Gilbert, B.K.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2004
Subjects
Bipolar transistors
Cutoff frequency
DH-HEMTs
Indium phosphide
Integrated circuit manufacture
Integrated circuit technology
Logic circuits
Logic devices
Manufacturing processes
Virtual manufacturing
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Summary:We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (f/sub /spl tau//) and maximum oscillation frequency (f/sub max/) over 300 GHz and open-base breakdown voltage (BV/sub ceo/) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.832528