Very thin layers prepared by laser ablation from Bi/sub 2/Te/sub 3/ target
Transport properties are presented for 60nm thick layers which were prepared by the laser ablation from a Bi/sub 2/Te/sub 3/ target. The layers are deposited on quartz glass substrates. The energy density of the laser beam I on the target is 2Jcm/sup -2/ and the temperature of the substrate during d...
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Published in | Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726) pp. 342 - 345 |
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Main Authors | , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2003
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Subjects | |
Online Access | Get full text |
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Summary: | Transport properties are presented for 60nm thick layers which were prepared by the laser ablation from a Bi/sub 2/Te/sub 3/ target. The layers are deposited on quartz glass substrates. The energy density of the laser beam I on the target is 2Jcm/sup -2/ and the temperature of the substrate during deposition varies between (200-480/spl deg/C) for different samples. The influence of the temperature of the substrate during the deposition on topography of layers measured by Scanning Tunnelling Microscope (STM) is presented. The BiTe and Bi/sub 2/Te phases are detected by the X-ray Diffraction (XRD) method. |
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ISBN: | 078038301X 9780780383012 |
DOI: | 10.1109/ICT.2003.1287518 |