Very thin layers prepared by laser ablation from Bi/sub 2/Te/sub 3/ target

Transport properties are presented for 60nm thick layers which were prepared by the laser ablation from a Bi/sub 2/Te/sub 3/ target. The layers are deposited on quartz glass substrates. The energy density of the laser beam I on the target is 2Jcm/sup -2/ and the temperature of the substrate during d...

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Published inProceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726) pp. 342 - 345
Main Authors Zeipl, R., Karamazov, S., Jelinek, M., Lostak, P., Pavelka, M., Winiarz, S., Czajka, R., Vanis, J., Sroubek, F., Zelinka, J., Walachova, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
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Summary:Transport properties are presented for 60nm thick layers which were prepared by the laser ablation from a Bi/sub 2/Te/sub 3/ target. The layers are deposited on quartz glass substrates. The energy density of the laser beam I on the target is 2Jcm/sup -2/ and the temperature of the substrate during deposition varies between (200-480/spl deg/C) for different samples. The influence of the temperature of the substrate during the deposition on topography of layers measured by Scanning Tunnelling Microscope (STM) is presented. The BiTe and Bi/sub 2/Te phases are detected by the X-ray Diffraction (XRD) method.
ISBN:078038301X
9780780383012
DOI:10.1109/ICT.2003.1287518