Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO/sub 2/-Si at the gas adsorption [currant read as current]

The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.

Saved in:
Bibliographic Details
Published inProceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Vol. 1; pp. 137 - 138 Vol.1
Main Authors Il'chenko, V.V., Kravchenko, A.I., Telega, V.V., Chehun, V.P., Gaskov, A.M., Grinchenko, V.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Current measurement
Frequency dependence
Frequency measurement
Frequency modulation
Semiconductor diodes
Semiconductor thin films
Sensor phenomena and characterization
Signal analysis
Sputtering
Voltage
Online AccessGet full text

Cover

More Information
Summary:The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
ISBN:0780381335
9780780381339
DOI:10.1109/ICSENS.2003.1278914