Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector

In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response of the detector is compared with the prediction of our theoretical model.

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Bibliographic Details
Published inThe 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003 Vol. 2; pp. 923 - 924 vol.2
Main Authors Amtout, A., Raghavan, S., Rotella, P., von Winckel, G., Stintz, A., Krishna, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Dark current
Detectors
Gallium arsenide
Indium gallium arsenide
Molecular beam epitaxial growth
Quantum dots
Quantum mechanics
Semiconductor process modeling
Temperature
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Summary:In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response of the detector is compared with the prediction of our theoretical model.
ISBN:0780378881
9780780378889
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2003.1253105