Analysis on the low-k benzo-cyclo-butene passivation of pseudomorphic high electron mobility transistors

In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0.1 /spl mu/m gate length PH...

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Published in2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) pp. 349 - 352
Main Authors Wook-Suk Sul, Hyo-Jong Han, Byoung-Ok Lim, Bok-Hyoung Lee, Sung-Dae Lee, Mi-Ra Kim, Sam-Dong Kim, Jin-Koo Rhee
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Dielectric constant
Dielectric materials
Gallium arsenide
HEMTs
Millimeter wave technology
MODFETs
Passivation
PHEMTs
Radio frequency
Scanning electron microscopy
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Summary:In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0.1 /spl mu/m gate length PHEMT's passivated by either the conventional Si/sub 3/N/sub 4/ or the low dielectric constant benzo-cyclo-butene (BCB)layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si/sub 3/N/sub 4/, whereas the DC and other RF properties were not significantly affected by the passivation materials.
ISBN:0780375718
9780780375710
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2002.1237262