Novel Co/Ni bi-layer salicidation for 45 nm gate technology

We present the novel concept of "bi-layer metal salicidation" by using Co/Ni stacked films, which showed better film chemical and plasma resistance than pure NiSi. NFET device performance demonstrates 5% Idsat/Ioff (100 nA) improvement and no degradation in terms of sheet resistance, junct...

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Bibliographic Details
Published in2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) pp. 157 - 158
Main Authors Wang, M.Y., Chang, C.W., Wu, C.M., Lin, C.T., Hsieh, C.H., Shue, W.S., Liang, M.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Bonding
Chemicals
Degradation
Etching
Plasma applications
Plasma chemistry
Plasma stability
Silicides
Temperature control
Temperature distribution
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Summary:We present the novel concept of "bi-layer metal salicidation" by using Co/Ni stacked films, which showed better film chemical and plasma resistance than pure NiSi. NFET device performance demonstrates 5% Idsat/Ioff (100 nA) improvement and no degradation in terms of sheet resistance, junction leakage and isolation than pure NiSi. We also prove the approach can be implemented easily to manufacturing with conventional post salicide process similar to CoSi/sub 2/ for 45 nm gate technology and below.
ISBN:9784891140335
489114033X
DOI:10.1109/VLSIT.2003.1221133