InP HEMT-based CPW amplifiers for 94 and 110 GHz

94 GHz and 110 GHz single- and two-stages amplifiers have been fabricated with our in-house 0.1 /spl mu/m lattice-matched InP HEMT process. The single transistors show state-of-the-art performances for this gate length with extrinsic f/sub T/ and f/sub max/ of 185 and 300 GHz, respectively and a max...

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Bibliographic Details
Published inInternational Conference onIndium Phosphide and Related Materials, 2003 pp. 110 - 113
Main Authors Robin, F., Orzati, A., Limacher, R., Meier, H., Bachtold, W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Accuracy
Bandwidth
Circuit simulation
Coplanar waveguides
Frequency
HEMTs
Indium phosphide
Laboratories
Performance gain
Predictive models
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Summary:94 GHz and 110 GHz single- and two-stages amplifiers have been fabricated with our in-house 0.1 /spl mu/m lattice-matched InP HEMT process. The single transistors show state-of-the-art performances for this gate length with extrinsic f/sub T/ and f/sub max/ of 185 and 300 GHz, respectively and a maximum available gain (MAG) of 8.3 dB at 110 GHz. The single-stage amplifiers designed and fabricated in our laboratory showed excellent peak gains of 7.6 dB and 6.5 dB at 94 and 110 GHz, respectively. Two-stages amplifiers showed gain in excess of 12 dB at these frequencies with a 3 dB bandwidth better than 10 GHz. To improve the prediction accuracy of the circuit simulator, all transmission lines and T-junctions were modeled with an electromagnetic simulator.
ISBN:0780377044
9780780377042
DOI:10.1109/ICIPRM.2003.1205325