A 580 × 500-element CCD imager with a shallow flat P well

This paper will discuss an interline-transfer CCD imager employing a shallow flat P-well that incorporates CCD shift registers, as well as photodiodes. Aperture ratio is 32% and a smear level of -70db has been obtained. In the unit cell, an N type substrate acts as an overflow drain for blooming sup...

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Published in1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Vol. XXVIII; pp. 98 - 99
Main Authors Nagakawa, T., Miyatake, S., Kosaza, H., Misawa, K., Okuno, M., Iikawa, K., Sakamoto, S., Matsui, O., Awane, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1985
Subjects
Apertures
Charge coupled devices
Clocks
Electrons
Image resolution
Lighting
Operational amplifiers
Photodiodes
Solid state circuits
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Summary:This paper will discuss an interline-transfer CCD imager employing a shallow flat P-well that incorporates CCD shift registers, as well as photodiodes. Aperture ratio is 32% and a smear level of -70db has been obtained. In the unit cell, an N type substrate acts as an overflow drain for blooming suppression, while a single flat P-well is employed in the imaging area.
DOI:10.1109/ISSCC.1985.1156728