A new micropower complementary bipolar transistor structure
A micropower complementary monolithic bipolar transistor structure with relatively simple processing steps has been developed. High current gains, very low saturation voltages and high sheet resistances are inherent characteristics of the structure.
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Published in | 1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Vol. XV; pp. 194 - 195 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1972
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Subjects | |
Online Access | Get full text |
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