A new micropower complementary bipolar transistor structure

A micropower complementary monolithic bipolar transistor structure with relatively simple processing steps has been developed. High current gains, very low saturation voltages and high sheet resistances are inherent characteristics of the structure.

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Bibliographic Details
Published in1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Vol. XV; pp. 194 - 195
Main Authors Su, S., Meindl, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1972
Subjects
Bipolar transistors
Blood flow
Circuits
Delta modulation
Fluid flow measurement
Logic gates
Low voltage
Resistors
Robustness
Schottky diodes
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Summary:A micropower complementary monolithic bipolar transistor structure with relatively simple processing steps has been developed. High current gains, very low saturation voltages and high sheet resistances are inherent characteristics of the structure.
DOI:10.1109/ISSCC.1972.1155117