A 1kw /sub peak/, 300 W /sub avg/ IMPATT Diode Injection Locked Oscillator

Design procedures were developed for and applied to a circularly cylindrical resonant cavity combiner (CCRCC) operating in the TM /sub 020/ mode. Thirty-two (32) GaAs double-drift IMPATT diodes were power combined in such a structure yielding 313 watts average and 1043 watts peak at X-Band.

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Bibliographic Details
Published in1982 IEEE MTT-S International Microwave Symposium Digest pp. 126 - 128
Main Authors Drubin, C.A., Hieber, A.L., Jerinic, G., Marinilli, A.S.
Format Conference Proceeding
LanguageEnglish
Published 1982
Subjects
Coaxial components
Coupling circuits
Dielectric materials
Diodes
Frequency
Impedance
Injection-locked oscillators
Magnetic field measurement
Magnetic resonance
Transmission line matrix methods
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Summary:Design procedures were developed for and applied to a circularly cylindrical resonant cavity combiner (CCRCC) operating in the TM /sub 020/ mode. Thirty-two (32) GaAs double-drift IMPATT diodes were power combined in such a structure yielding 313 watts average and 1043 watts peak at X-Band.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1982.1130634