Low Noise Millimeter Wave Schottky Barrier Diodes with Extremely Low Local Oscillator Power Requirements

Low capacitance Schottky barrier diodes have been fabricated which yield extremely low noise performance and require exceptionally low local oscillator power. Measurements made at 111 GHz and 170 GHz are presented.

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Bibliographic Details
Published in1979 IEEE MTT-S International Microwave Symposium Digest pp. 81 - 83
Main Authors Vizard, D.R., Keen, N.J., Kelly, W.M., Wrixon, G.T.
Format Conference Proceeding
LanguageEnglish
Published 1979
Subjects
Acoustical engineering
Local oscillators
Noise figure
Noise measurement
Noise reduction
Power measurement
Schottky barriers
Schottky diodes
Temperature
Testing
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Summary:Low capacitance Schottky barrier diodes have been fabricated which yield extremely low noise performance and require exceptionally low local oscillator power. Measurements made at 111 GHz and 170 GHz are presented.
DOI:10.1109/MWSYM.1979.1123978