Strain-Regulated Polarity Switching in Flexible MoTe2 Transistors

• Published in: Proceedings of the ... IEEE Conference on Nanotechnology pp. 571 - 574
• Main Authors: Wang, Bo, Chang, Bo, Chen, Jiayi, Xu, Haoyuan, Sun, Linbo, Zhao, Chengdong, Wang, Zhehan, Zhang, Yuqing, Tao, Li
• Format: Conference Proceeding
• Language: English
• Published: IEEE 13.07.2025
• Subjects: Band structures; Electron mobility; flexible transistors; high-speed electronics; Modulation; MoTe2; Next generation networking; programmable flexible devices; Strain; strain effect; Surges; Switching circuits; Transistors; Transition metal dichalcogenides; Tunneling
• ISSN: 1944-9380
• DOI: 10.1109/NANO63165.2025.11113680

Molybdenum ditelluride (MoTe 2 ), a recently emerging two-dimensional transition metal dichalcogenide (TMDC), has demonstrated excellent electrical properties for next-generation flexible electronics. However, its devices still suffer from limited carrier mobility and ineffective modulation of ambipolar transport behavior. Herein, this work represents a flexible locally buried-gated MoTe 2 transistors that feature hole and electron mobilities up to 24.63 and 13.51 \text{cm}^{2} / \mathrm{V} \cdot \mathrm{s} , respectively. In addition, we demonstrate the strain-induced polarity transition via customized platforms, resulting from strain-dependent band structure in 2D MoTe 2 . Our work exhibits the potential of MoTe 2 for future flexible integrated CMOS circuits.