An X-band monolithic double double-balanced mixer for high dynamic receiver application

An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression outpu...

Full description

Saved in:
Bibliographic Details
Published inIEEE Symposium on Microwave and Millimeter-Wave Monolithic Circuits pp. 115 - 118
Main Authors Ton, T.N., Dow, G.S., Chen, T.H., Lacon, M., Lin, T.S., Bui, S., Yang, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1990
Subjects
Frequency conversion
Frequency measurement
Local oscillators
Loss measurement
MESFETs
Mixers
Power generation
Radio frequency
Schottky barriers
Schottky diodes
Online AccessGet full text

Cover

More Information
Summary:An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors' knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.< >
DOI:10.1109/MCS.1990.110952