APA (7th ed.) Citation

Medjdoub, F. (2025, April 21). Emerging Vertical GaN-on-Silicon Devices for Next Generation Power Electronics. 2025 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 1. https://doi.org/10.1109/VLSITSA64674.2025.11046979

Chicago Style (17th ed.) Citation

Medjdoub, Farid. "Emerging Vertical GaN-on-Silicon Devices for Next Generation Power Electronics." 2025 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) 21 Apr. 2025: 1. https://doi.org/10.1109/VLSITSA64674.2025.11046979.

MLA (9th ed.) Citation

Medjdoub, Farid. "Emerging Vertical GaN-on-Silicon Devices for Next Generation Power Electronics." 2025 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 21 Apr. 2025, p. 1, https://doi.org/10.1109/VLSITSA64674.2025.11046979.