Comprehensive Analysis on Simulation Parameters of Carbon Nanotube Field Effect Transistors

Carbon Nanotube Field Effect Transistors (CNTFETs) use carbon nanotubes as channel material to control current flow, offering high carrier mobility, excellent current carrying capacity, flexibility with substrates, and a high ON/OFF ratio. Despite these advantages, issues like fabrication complexity...

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Bibliographic Details
Published in2024 9th International Conference on Communication and Electronics Systems (ICCES) pp. 386 - 391
Main Authors N, Achsah Gladith, P, Anandan
Format Conference Proceeding
LanguageEnglish
Published IEEE 16.12.2024
Subjects
Analytical models
Carbon nanotubes
CNTFET
CNTFETs
Design and Analysis
EDA tools
Hardware design languages
Reviews
Simulation Workflow
SPICE
Thermal analysis
Thermal conductivity
Thermal resistance
Transistors
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DOI10.1109/ICCES63552.2024.10859548

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Summary:Carbon Nanotube Field Effect Transistors (CNTFETs) use carbon nanotubes as channel material to control current flow, offering high carrier mobility, excellent current carrying capacity, flexibility with substrates, and a high ON/OFF ratio. Despite these advantages, issues like fabrication complexity, defects, variability, impurities, integration, cost, and commercialization challenges need addressing. This paper examines the key parameters of CNTFETs and reviews various simulation software for their analysis and modelling. The role of Electronic Design Automation (EDA) tools in enhancing CNTFET performance, flexibility, and optimization is explored. A comprehensive simulation workflow is identified to mitigate errors and improve reliability. The impact of chiral values on CNTFETs is analyzed. The discussions include the effective use of EDA tools such as Nanohub, TCAD, COMSOL, HSPICE, SPICE, Verilog, and Cadence tools in analyzing and optimizing CNTFETs.
DOI:10.1109/ICCES63552.2024.10859548