Analytical Power Loss Model for GaN Transistors Based on Temperature and Parasitic Parameters

• Published in: 2024 7th International Conference on Electrical Engineering and Green Energy (CEEGE) pp. 119 - 124
• Main Authors: Qin, Haihong, Zheng, Xiaoxue, Zhu, Ziyue, Gong, Chunying
• Format: Conference Proceeding
• Language: English
• Published: IEEE 28.06.2024
• Subjects: Accuracy; Analytical models; double pulse test; Gallium nitride; HEMTs; power loss modeling; Predictive models; Switches; Switching loss; System analysis and design; Thermal management; Transistors
• DOI: 10.1109/CEEGE62093.2024.10744178

The emergence of wide bandgap power devices based on Gallium Nitride (GaN) material has propelled the development of power electronic converters towards high frequency, high power density, and miniaturization. However, as switching speed increases, so does the proportion of switching losses. Accurate analysis of switching loss is crucial for evaluating and optimizing converter performance, as well as enhancing system reliability. This paper establishes a comprehensive GaN device switching loss model that considers parasitic parameters and temperature effects. The impact of key parasitic parameters on GaN devices is analyzed, and the switching losses using an analytical model that considers the relationship between device parasitic capacitance, PCB parasitic parameters, temperature variations, and losses is estimated. The effectiveness of the proposed model is verified on a double pulse experimental platform based on GS66516T. Extensive experimental results show that under different working conditions and temperatures, the error between the proposed loss model predictions and actual losses remains within 10%, thus enabling accurate prediction.