Fabrication and Characterization of MoS2-Based RF Memristor Switches for Terahertz Applications

A fully cleanroom-compatible technological process for large-scale integration on a 200 mm silicon substrate has been developed to manufacture bistable memristor RF switches based on MoS 2 . Efforts were made to avoid polymer contamination between the MoS 2 and the electrodes. Cycling behavior and f...

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Bibliographic Details
Published in2024 54th European Microwave Conference (EuMC) pp. 776 - 779
Main Authors Trousset, Pierre, Reig, Bruno, Le Van-Jodin, Lucie, Ligaud, Clotilde, Okuno, Hanako, Cadot, Stephane, Jamet, Matthieu
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association (EuMA) 24.09.2024
Subjects
Cutoff frequency
Frequency measurement
memristor
Memristors
Molybdenum
MoS 2
nanotechnologies
Pollution measurement
Polymers
Radio frequency
Silicon
Substrates
Sulfur
switches
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Summary:A fully cleanroom-compatible technological process for large-scale integration on a 200 mm silicon substrate has been developed to manufacture bistable memristor RF switches based on MoS 2 . Efforts were made to avoid polymer contamination between the MoS 2 and the electrodes. Cycling behavior and frequency behavior of the devices for different active surface dimensions were measured and analyzed. Cut-off frequencies better than 1 THz were obtained for switches with an active area of 0.16 µm 2 .
DOI:10.23919/EuMC61614.2024.10732829