104 Hz Linewidth, Self-Injection Locked, Chip Scale NIR Laser

Self-injection locking is induced via low-loss Si 3 N 4 ring coupled to a III/V DBR laser, achieving intrinsic linewidths of 103.8Hz. The injection locked laser shows 3 orders of magnitude improvement in linewidth versus the free running state.

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Bibliographic Details
Published in2024 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Madaras, Scott E., Starbuck, Andrew L., Trotter, Douglas C., Pomerene, Andrew, Friedmann, Tomas A., Boady, Matthew S., Martinez, William M., Otterstrom, Nils T., Chow, Weng W., Skogen, Erik J., Gehl, Michael R.
Format Conference Proceeding
LanguageEnglish
Published Optica 05.05.2024
Subjects
Contracts
Distributed Bragg reflectors
Electro-optical waveguides
Injection-locked oscillators
Lasers and electrooptics
Optical ring resonators
Ring lasers
Semiconductor lasers
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Summary:Self-injection locking is induced via low-loss Si 3 N 4 ring coupled to a III/V DBR laser, achieving intrinsic linewidths of 103.8Hz. The injection locked laser shows 3 orders of magnitude improvement in linewidth versus the free running state.