Memcapacitor with High Switching Ratio and Tunable Synaptic Plasticity

A memcapacitor with \mathrm{n}-\text{Si}/\text{SiO}_{\mathrm{X}}/\text{HfO}_{\mathrm{X}}/\text{Ti}/\text{Pt} stack is reported in this work. The \text{HfO}_{\mathrm{X}} functional layer was deposited via atomic layer deposition (ALD) process at 200^{\circ}\mathrm{C} I, ensuring compatibility with CM...

Full description

Saved in:
Bibliographic Details
Published in2024 IEEE International Conference on IC Design and Technology (ICICDT) pp. 1 - 3
Main Authors Tang, Huansong, Li, Yida, Zhou, Feichi
Format Conference Proceeding
LanguageEnglish
Published IEEE 25.09.2024
Subjects
Atomic layer deposition
Capacitance
Capacitance-voltage characteristics
Degradation
Electric potential
Energy efficiency
high switching ratio
memcapacitor
Neuromorphic engineering
Switches
Switching circuits
synaptic plasticity
Voltage
Online AccessGet full text

Cover

More Information
Summary:A memcapacitor with \mathrm{n}-\text{Si}/\text{SiO}_{\mathrm{X}}/\text{HfO}_{\mathrm{X}}/\text{Ti}/\text{Pt} stack is reported in this work. The \text{HfO}_{\mathrm{X}} functional layer was deposited via atomic layer deposition (ALD) process at 200^{\circ}\mathrm{C} I, ensuring compatibility with CMOS back-end-of-line (BEOL) process. The device exhibits excellent capacitance-voltage (C- V) characteristics, including a high capacitance switching ratio of 21 at 0 V DC read voltage, and endurance exceeding 10^{4} cycles. Further, by modulating the applied voltage pulses, tunable capacitive response of the device can be achieved, including short-term plasticity (STP) and long-term plasticity (L TP). The use of non-volatile memcapacitor as synaptic weights holds promise for future neuromorphic computing applications.
ISSN:2691-0462
DOI:10.1109/ICICDT63592.2024.10717739